Monolithic integration of a GaAs MESFET with a resonant cavity LED using a buried oxide layer

A new method to monolithically integrate a GaAs MESFET and a resonant cavity InGaAs QW LED is demonstrated. Current confinement in these two dissimilar devices is accomplished using a buried insulating layer formed by the thermal oxidation of AlAs. Fabrication and device performance under dc bias as...

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Bibliographic Details
Published inIEEE photonics technology letters Vol. 9; no. 2; pp. 194 - 196
Main Authors Wheeler, C., Daryanani, S., Mathine, D.L., Maracas, G.N., Allee, D.R.
Format Journal Article
LanguageEnglish
Published IEEE 01.02.1997
Subjects
Apertures
Gallium arsenide
Insulation
Light emitting diodes
MESFETs
Monolithic integrated circuits
Optical surface waves
Oxidation
Resonance
Surface emitting lasers
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Summary:A new method to monolithically integrate a GaAs MESFET and a resonant cavity InGaAs QW LED is demonstrated. Current confinement in these two dissimilar devices is accomplished using a buried insulating layer formed by the thermal oxidation of AlAs. Fabrication and device performance under dc bias as well as modulation results are briefly described.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1041-1135
1941-0174
DOI:10.1109/68.553089