An InP-Based Dual-Depletion-Region Electroabsorption Modulator with Low Capacitance and Predicted High Bandwidth
A novel dual-depletion-region electroabsorption modulator (DDR-EAM) based on InP at 1550 nm is fabricated. The measured capacitance and extinction ratio of the DDR-EAM reveal that the dual depletion region structure can reduce the device capacitance significantly without any degradation of extinctio...
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Published in | Chinese physics letters Vol. 28; no. 11; pp. 114207 - 1-114207-4 |
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Main Authors | , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
IOP Publishing
01.11.2011
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Subjects | |
Online Access | Get full text |
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Summary: | A novel dual-depletion-region electroabsorption modulator (DDR-EAM) based on InP at 1550 nm is fabricated. The measured capacitance and extinction ratio of the DDR-EAM reveal that the dual depletion region structure can reduce the device capacitance significantly without any degradation of extinction ratio. Moreover, the band-width of the DDR-EAM predicted by using an equivalent circuit model is larger than twice the bandwidth of the conventional lumped-electrode EAM (L-EAM). |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 0256-307X 1741-3540 |
DOI: | 10.1088/0256-307X/28/11/114207 |