An InP-Based Dual-Depletion-Region Electroabsorption Modulator with Low Capacitance and Predicted High Bandwidth

A novel dual-depletion-region electroabsorption modulator (DDR-EAM) based on InP at 1550 nm is fabricated. The measured capacitance and extinction ratio of the DDR-EAM reveal that the dual depletion region structure can reduce the device capacitance significantly without any degradation of extinctio...

Full description

Saved in:
Bibliographic Details
Published inChinese physics letters Vol. 28; no. 11; pp. 114207 - 1-114207-4
Main Authors Shao, Yong-Bo (永波 邵), Zhao, Ling-Juan (玲娟 赵), Yu, Hong-Yan (红艳 于), Qiu, Ji-Fang (吉芳 邱), Qiu, Ying-Ping (应平 邱), Pan, Jiao-Qing (教青 潘), Wang, Bao-Jun (宝军 王), Zhu, Hong-Liang (洪亮 朱), Wang, Wei (圩王)
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.11.2011
Subjects
Bandwidth
Capacitance
Depletion
Devices
Electroabsorption modulators
Equivalent circuits
Extinction
Mathematical models
Online AccessGet full text

Cover

More Information
Summary:A novel dual-depletion-region electroabsorption modulator (DDR-EAM) based on InP at 1550 nm is fabricated. The measured capacitance and extinction ratio of the DDR-EAM reveal that the dual depletion region structure can reduce the device capacitance significantly without any degradation of extinction ratio. Moreover, the band-width of the DDR-EAM predicted by using an equivalent circuit model is larger than twice the bandwidth of the conventional lumped-electrode EAM (L-EAM).
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/28/11/114207