Effects of post-oxidation annealing temperature on ZrO2 thin film deposited on 4H-SiC substrate

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Bibliographic Details
Published inMaterials science in semiconductor processing Vol. 14; no. 1; pp. 13 - 17
Main Authors KURNIAWAN, Tedi, YEW HOONG WONG, KUAN YEW CHEONG, JEONG HYUN MOON, BAHNG, Wook, KHAIRUNISAK ABDUL RAZAK, LOCKMAN, Zainovia, HYEONG JOON KIM, KIM, Nam-Kyun
Format Journal Article
LanguageEnglish
Published Kidlington Elsevier 01.03.2011
Subjects
Annealing
Applied sciences
Corrosion
Corrosion mechanisms
Cross-disciplinary physics: materials science; rheology
Deposition by sputtering
Dielectric, amorphous and glass solid devices
Electronics
Exact sciences and technology
Heat treatment
Materials science
Metals. Metallurgy
Methods of deposition of films and coatings; film growth and epitaxy
Physics
Production techniques
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Density of states
Voltage current curve
High dielectric constant oxide
Annealing temperature
Thin film
Microelectronic fabrication
Zirconium oxide
Disruptive voltage
n type semiconductor
Oxidation
Current density
Voltage capacity curve
Electrical characteristic
Interface state
High resolution electron microscopy
Annealing
Post-oxidation annealing
Electrical properties
Crystallinity
Dispersive spectrometry
Physical properties
MOS capacitor
Charge carrier trapping
Breakdown voltage
Silicon carbide
Leakage current
High k dielectric
Wide band gap semiconductors
Sputter deposition
Microstructure
Wide-bandgap semiconductor
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ISSN:1369-8001
1873-4081
DOI:10.1016/j.mssp.2010.12.011