Optical, electrical properties and reproducible resistance switching of GeO2 thin films by sol–gel process

Electrical, optical properties and microstructures of GeO2 thin films prepared by the sol-gel method on ITO substrates at different preheating and annealing temperatures have been investigated. All films exhibited GeO2 (101) orientations perpendicular to the substrate surface and the grain size incr...

Full description

Saved in:
Bibliographic Details
Published inThin solid films Vol. 519; no. 15; pp. 5033 - 5037
Main Authors Hsu, Cheng-Hsing, Lin, Jenn-Sen, He, Yi-Da, Yang, Shu-Fong, Yang, Pai-Chuan, Chen, Wen-Shiush
Format Journal Article
LanguageEnglish
Published 31.05.2011
Subjects
Annealing
Germanium oxides
Heating
Optical properties
Preheating
Sol gel process
Switching
Thin films
Online AccessGet full text

Cover

More Information
Summary:Electrical, optical properties and microstructures of GeO2 thin films prepared by the sol-gel method on ITO substrates at different preheating and annealing temperatures have been investigated. All films exhibited GeO2 (101) orientations perpendicular to the substrate surface and the grain size increased with increasing preheating and annealing temperature. The dependence of the microstructure, optical transmittance spectra, optical bandgap and dielectric characteristics on preheating and annealing temperatures was also investigated. Considering the primary memory switching behavior of GeO2, ReRAM based on GeO2 shows promise for future nonvolatile memory applications.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0040-6090
DOI:10.1016/j.tsf.2011.01.123