Submilliwatt optical bistability in wafer fused vertical cavity at 1.55-μm wavelength
We report on low-power optical bistability in a vertical cavity structure at 1.55-μm wavelength due to the bandgap resonant dispersive optical nonlinearity of InGaAsP. In this structure, a GaAs-AlAs Bragg reflector grown on GaAs and the nonlinear medium grown on InP are bonded through wafer-fusion,...
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| Published in | IEEE photonics technology letters Vol. 8; no. 4; pp. 539 - 541 |
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| Main Authors | , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
IEEE
01.04.1996
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| Subjects | |
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| Abstract | We report on low-power optical bistability in a vertical cavity structure at 1.55-μm wavelength due to the bandgap resonant dispersive optical nonlinearity of InGaAsP. In this structure, a GaAs-AlAs Bragg reflector grown on GaAs and the nonlinear medium grown on InP are bonded through wafer-fusion, leading to a high-quality vertical cavity after deposition of a top dielectric mirror. This device shows interesting characteristics for optical switching applications at fiber communication wavelengths, such as a switching contrast higher than 8:1 in the reflective mode and a bistability threshold power as low as 0.6 mW. True steady-state memory effect is observed with continuous-wave input, and the device switching time is in the ns range. |
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| AbstractList | We report on low-power optical bistability in a vertical cavity structure at 1.55- mu m wavelength due to the bandgap resonant dispersive optical nonlinearity of InGaAsP. In this structure, a GaAs-AlAs Bragg reflector grown on GaAs and the nonlinear medium grown on InP are bonded through wafer-fusion, leading to a high-quality vertical cavity after deposition of a top dielectric mirror. This device shows interesting characteristics for optical switching applications at fiber communication wavelengths, such as a switching contrast higher than 8:1 in the reflective mode and a bistability threshold power as low as 0.6 mW. True steady-state memory effect is observed with continuous-wave input, and the device switching time is in the ns range. We report on low-power optical bistability in a vertical cavity structure at 1.55-μm wavelength due to the bandgap resonant dispersive optical nonlinearity of InGaAsP. In this structure, a GaAs-AlAs Bragg reflector grown on GaAs and the nonlinear medium grown on InP are bonded through wafer-fusion, leading to a high-quality vertical cavity after deposition of a top dielectric mirror. This device shows interesting characteristics for optical switching applications at fiber communication wavelengths, such as a switching contrast higher than 8:1 in the reflective mode and a bistability threshold power as low as 0.6 mW. True steady-state memory effect is observed with continuous-wave input, and the device switching time is in the ns range. |
| Author | Patriarche, G. Ougazzaden, A. Oudar, J.L. Jeannes, F. Azoulay, R. Landreau, J. |
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| References | ref13 ref12 ref14 ref10 adachi (ref15) 1990 ref2 ref1 ref8 ref9 ref4 kawaguchi (ref5) 1987; 23 neilson (ref7) 1993; 29 ref3 ref6 patriarche (ref16) 1995 lo (ref11) 1991; 58 |
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| Snippet | We report on low-power optical bistability in a vertical cavity structure at 1.55-μm wavelength due to the bandgap resonant dispersive optical nonlinearity of... We report on low-power optical bistability in a vertical cavity structure at 1.55- mu m wavelength due to the bandgap resonant dispersive optical nonlinearity... |
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| SubjectTerms | Communication switching Dispersion Fiber nonlinear optics Gallium arsenide Indium phosphide Nonlinear optical devices Nonlinear optics Optical bistability Photonic band gap Resonance |
| Title | Submilliwatt optical bistability in wafer fused vertical cavity at 1.55-μm wavelength |
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