Submilliwatt optical bistability in wafer fused vertical cavity at 1.55-μm wavelength

We report on low-power optical bistability in a vertical cavity structure at 1.55-μm wavelength due to the bandgap resonant dispersive optical nonlinearity of InGaAsP. In this structure, a GaAs-AlAs Bragg reflector grown on GaAs and the nonlinear medium grown on InP are bonded through wafer-fusion,...

Full description

Saved in:
Bibliographic Details
Published inIEEE photonics technology letters Vol. 8; no. 4; pp. 539 - 541
Main Authors Jeannes, F., Patriarche, G., Azoulay, R., Ougazzaden, A., Landreau, J., Oudar, J.L.
Format Journal Article
LanguageEnglish
Published IEEE 01.04.1996
Subjects
Communication switching
Dispersion
Fiber nonlinear optics
Gallium arsenide
Indium phosphide
Nonlinear optical devices
Nonlinear optics
Optical bistability
Photonic band gap
Resonance
Online AccessGet full text

Cover

More Information
Summary:We report on low-power optical bistability in a vertical cavity structure at 1.55-μm wavelength due to the bandgap resonant dispersive optical nonlinearity of InGaAsP. In this structure, a GaAs-AlAs Bragg reflector grown on GaAs and the nonlinear medium grown on InP are bonded through wafer-fusion, leading to a high-quality vertical cavity after deposition of a top dielectric mirror. This device shows interesting characteristics for optical switching applications at fiber communication wavelengths, such as a switching contrast higher than 8:1 in the reflective mode and a bistability threshold power as low as 0.6 mW. True steady-state memory effect is observed with continuous-wave input, and the device switching time is in the ns range.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1041-1135
1941-0174
DOI:10.1109/68.491219