Thin-film inverted MSM photodetectors

To improve the external quantum efficiency and maintain the high speed of metal-semiconductor-metal (MSM) photodetectors, a thin film inverted MSM (I-MSM), which is separated from the growth substrate, has fingers on the bottom of the device, and is bonded to a silicon host substrate, is reported fo...

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Bibliographic Details
Published inIEEE photonics technology letters Vol. 8; no. 2; pp. 266 - 268
Main Authors Vendier, O., Jokerst, N.M., Leavitt, R.P.
Format Journal Article
LanguageEnglish
Published IEEE 01.02.1996
Subjects
Capacitance
Computer aided manufacturing
Electrodes
Fingers
Integrated circuit packaging
Lighting
Photodetectors
PIN photodiodes
Shadow mapping
Transistors
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Summary:To improve the external quantum efficiency and maintain the high speed of metal-semiconductor-metal (MSM) photodetectors, a thin film inverted MSM (I-MSM), which is separated from the growth substrate, has fingers on the bottom of the device, and is bonded to a silicon host substrate, is reported for the first time. This device optimizes the tradeoff between speed and responsivity, demonstrating the improvement in responsivity that can be achieved using an I-MSM. The photodetector time domain response at /spl lambda/=1.3 μm is 50 ps FWHM, with a 34 ps rise time and a 85 ps fall time.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1041-1135
1941-0174
DOI:10.1109/68.484262