150 mW deep-ultraviolet light-emitting diodes with large-area AlN nanophotonic light-extraction structure emitting at 265 nm

• Published in: Applied physics letters Vol. 110; no. 14
• Main Authors: Inoue, Shin-ichiro, Tamari, Naoki, Taniguchi, Manabu
• Format: Journal Article
• Language: English
• Published: 03.04.2017
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.4978855

High-power 265 nm deep-ultraviolet (DUV) AlGaN-based light-emitting diodes (LEDs) with large-area AlN nanophotonic light-extraction structures that were fabricated by a nanoimprint lithography process are presented. Each DUV-LED has a large active area (mesa size of ∼0.35 mm2) and a uniform current spreading design that allows high injection current operation. We have shown that these DUV-LEDs with their large-area nanoimprinted AlN nanophotonic structures exhibit wider near-field emitting areas, stronger far-field extracted light intensities, and an approximately 20-fold increase in output power when compared with a conventional flat-surface DUV-LED. A large-area nanoimprinted single-chip DUV-LED operating in the UV-C wavelength regime has demonstrated a record continuous-wave output power in excess of 150 mW for an injection current of 850 mA at a peak emission wavelength of 265 nm.