Thermal stability of trapped hydrogen in amorphous carbon thin films on Si substrate using ion beam scattering

Unbalanced magnetron sputtering deposition of C-H films has been performed with various levels of negative substrate bias and with a fixed flow rate of hydrogen. Argon was used as a sputtering gas and formed the majority of the gas in the plasma. The effect of hydrogenation on the final concentratio...

Full description

Saved in:
Bibliographic Details
Published inJournal of physics. Conference series Vol. 194; no. 13; p. 132041
Main Authors Moore, A, Tecos, G, Nandasiri, M I, Garratt, E, Wickey, K J, Gao, X, Kayani, A
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.11.2009
Subjects
Analytical techniques
Argon
Backscattering
Elastic analysis
Flow velocity
Hydrogen
Ion beams
Magnetron sputtering
Physics
Rutherford backscattering spectroscopy
Silicon substrates
Spectrum analysis
Stability analysis
Thermal stability
Thin films
Online AccessGet full text

Cover

More Information
Summary:Unbalanced magnetron sputtering deposition of C-H films has been performed with various levels of negative substrate bias and with a fixed flow rate of hydrogen. Argon was used as a sputtering gas and formed the majority of the gas in the plasma. The effect of hydrogenation on the final concentration of trapped elements and their thermal stability with respect to hydrogen content is studied using ion beam analysis (IBA) techniques. The elemental concentrations of the films were measured in samples deposited on silicon substrates with a 3.3 MeV of He++ beam used to perform Rutherford Backscattering Spectroscopy (RBS), Non-Rutherford backscattering Spectroscopy (NRBS) and Elastic Recoil Detection Analysis (ERDA). Thermal stability with respect to trapped hydrogen in the film has been studied. As the films were heated in-situ in the vacuum using a o non-gassy button heater, hydrogen was found to be decreasing around 400° C.
ISSN:1742-6596
1742-6588
1742-6596
DOI:10.1088/1742-6596/194/13/132041