Photovoltaic substrates and hafnium based gate dielectrics characterized with total reflection X-ray fluorescence

• Published in: Spectrochimica acta. Part B: Atomic spectroscopy Vol. 63; no. 12; pp. 1351 - 1354
• Main Authors: Sparks, Chris M., Lanee, Sidi, Beebe, Meredith, Page, Matthew
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.12.2008
• Subjects: Hafnium silicate dielectric; Photovoltaic; Total reflection X-ray fluorescence; TXRF; Hafnium silicate dielectric; Photovoltaic; Total reflection X-ray fluorescence; TXRF
• ISSN: 0584-8547; 1873-3565
• DOI: 10.1016/j.sab.2008.10.032

In this study, the capabilities of total reflection X-ray fluorescence spectroscopy characterization for both the photovoltaic industry and advanced semiconductor processing were investigated. Analysis of single crystal silicon coupon samples from various cleans during photovoltaic processing showed that certain clean steps were more effective in removing trace metal contamination. The multicrystalline photovoltaic silicon sample also had detected, but difficult to quantify, metallic contamination. Changes in the silicon dioxide content of hafnium silicate films used in semiconductor processing were also characterized by total reflection X-ray fluorescence spectroscopy analysis.