Kinetics of GaN radical-beam gettering epitaxy on GaAs substrates
The growth of thin GaN layers on single-crystal GaAs substrates during annealing in an atmosphere containing nitrogen atoms (radicals) has been analyzed in terms of a kinetic model. The nitridation of the surface of GaAs substrates has been studied by x-ray photoelectron spectroscopy. The results de...
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Published in | Inorganic materials Vol. 42; no. 12; pp. 1342 - 1347 |
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Main Authors | , |
Format | Journal Article |
Language | English |
Published |
01.12.2006
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Online Access | Get full text |
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Summary: | The growth of thin GaN layers on single-crystal GaAs substrates during annealing in an atmosphere containing nitrogen atoms (radicals) has been analyzed in terms of a kinetic model. The nitridation of the surface of GaAs substrates has been studied by x-ray photoelectron spectroscopy. The results demonstrate that, at annealing temperatures below 500 deg C, both Ga-N and As-N bonds are formed on the substrate surface. Above 500 deg C, only Ga-N bonds are formed. The growth of GaN layers is shown to follow a quasi-epitaxial mechanism, in accordance with the proposed model. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0020-1685 1608-3172 |
DOI: | 10.1134/S0020168506120107 |