Kinetics of GaN radical-beam gettering epitaxy on GaAs substrates

The growth of thin GaN layers on single-crystal GaAs substrates during annealing in an atmosphere containing nitrogen atoms (radicals) has been analyzed in terms of a kinetic model. The nitridation of the surface of GaAs substrates has been studied by x-ray photoelectron spectroscopy. The results de...

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Bibliographic Details
Published inInorganic materials Vol. 42; no. 12; pp. 1342 - 1347
Main Authors Rogozin, I. V., Georgobiani, A. N.
Format Journal Article
LanguageEnglish
Published 01.12.2006
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Summary:The growth of thin GaN layers on single-crystal GaAs substrates during annealing in an atmosphere containing nitrogen atoms (radicals) has been analyzed in terms of a kinetic model. The nitridation of the surface of GaAs substrates has been studied by x-ray photoelectron spectroscopy. The results demonstrate that, at annealing temperatures below 500 deg C, both Ga-N and As-N bonds are formed on the substrate surface. Above 500 deg C, only Ga-N bonds are formed. The growth of GaN layers is shown to follow a quasi-epitaxial mechanism, in accordance with the proposed model.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0020-1685
1608-3172
DOI:10.1134/S0020168506120107