Online Junction Temperature Measurement of Double-sided Cooling IGBT Power Module through On-state Voltage with High Current

• Published in: Chinese Journal of Electrical Engineering Vol. 8; no. 4; pp. 104 - 112
• Main Authors: Chai, Xiaoguang, Ning, Puqi, Cao, Han, Zheng, Dan, Li, Huakang, Huang, Yunhao, Kang, Yuhui
• Format: Journal Article
• Language: English
• Published: University of Chinese Academy of Sciences,Beijing 100190,China 01.12.2022; Wuxi Power Supply Company of State Grid,Wuxi 214026,China%Institute of Electrical Engineering,Chinese Academy of Sciences,Beijing 100190,China; Institute of Electrical Engineering,Chinese Academy of Sciences,Beijing 100190,China; University of Chinese Academy of Sciences,Beijing 100190,China%Institute of Electrical Engineering,Chinese Academy of Sciences,Beijing 100190,China
• Subjects: on-state voltage with high current; Double-sided-cooling IGBT; junction temperature monitoring
• ISSN: 2096-1529
• DOI: 10.23919/CJEE.2022.000042

The aim of this study is to achieve online monitoring of the junction temperature of double-sided-cooling insulated gate bipolar transistor(IGBT)power modules by using the on-state voltage under a high current to maximize the utilization of IGBT power chips.Online junction temperature measurement plays an important role in improving the reliability of the inverter with IGBT,increasing the power density of the motor controller of electric vehicles,and reducing the cost of electric vehicles.