Correlation between the reliability of laser diodes and the crystal perfection of epitaxial layers estimated by high-resolution x-ray diffractometry

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Published inSemiconductors (Woodbury, N.Y.) Vol. 33; no. 5; pp. 590 - 593
Main Authors Evtikhiev, V. P., Kotel’nikov, E. Yu, Kudryashov, I. V., Tokranov, V. E., Faleev, N. N.
Format Journal Article
LanguageEnglish
Published 01.05.1999
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Author Evtikhiev, V. P.
Tokranov, V. E.
Kudryashov, I. V.
Faleev, N. N.
Kotel’nikov, E. Yu
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Cites_doi 10.1063/1.326393
10.1016/0022-0248(84)90459-7
10.1002/pssa.2210600207
10.1063/1.99512
10.1063/1.107872
10.1063/1.102189
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10.1063/1.347107
10.1103/PhysRevB.40.9802
10.4028/www.scientific.net/MSF.166-169.293
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PublicationTitle Semiconductors (Woodbury, N.Y.)
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Title Correlation between the reliability of laser diodes and the crystal perfection of epitaxial layers estimated by high-resolution x-ray diffractometry
Volume 33
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