Correlation between the reliability of laser diodes and the crystal perfection of epitaxial layers estimated by high-resolution x-ray diffractometry

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Bibliographic Details
Published inSemiconductors (Woodbury, N.Y.) Vol. 33; no. 5; pp. 590 - 593
Main Authors Evtikhiev, V. P., Kotel’nikov, E. Yu, Kudryashov, I. V., Tokranov, V. E., Faleev, N. N.
Format Journal Article
LanguageEnglish
Published 01.05.1999
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ISSN:1063-7826
1090-6479
DOI:10.1134/1.1187734