Design of GGNMOS ESD protection device for radiation-hardened 0.18 μm CMOS process

• Published in: Journal of semiconductors Vol. 41; no. 12; pp. 122403 - 59
• Main Authors: Wu, Jianwei, Yu, Zongguang, Hong, Genshen, Xie, Rubin
• Format: Journal Article
• Language: English
• Published: Chinese Institute of Electronics 01.12.2020; The 58th Research Institute of China Electronics Technology Group Corporation,Wuxi 214035,China
• Subjects: DCGS; ESD ion implantation; GGNMOS; leakage current; RHBP; STI; TLP; total ionizing dose; RHBP; DCGS; GGNMOS; total ionizing dose; ESD ion implantation; STI; TLP; leakage current

In this paper, the ESD discharge capability of GGNMOS (gate grounded NMOS) device in the radiation-hardened 0.18 μm bulk silicon CMOS process (Rad-Hard by Process: RHBP) is optimized by layout and ion implantation design. The effects of gate length, DCGS and ESD ion implantation of GGNMOS on dischar...