Design of GGNMOS ESD protection device for radiation-hardened 0.18 μm CMOS process
In this paper, the ESD discharge capability of GGNMOS (gate grounded NMOS) device in the radiation-hardened 0.18 μm bulk silicon CMOS process (Rad-Hard by Process: RHBP) is optimized by layout and ion implantation design. The effects of gate length, DCGS and ESD ion implantation of GGNMOS on dischar...
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Published in | Journal of semiconductors Vol. 41; no. 12; pp. 122403 - 59 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
Chinese Institute of Electronics
01.12.2020
The 58th Research Institute of China Electronics Technology Group Corporation,Wuxi 214035,China |
Subjects | |
Online Access | Get full text |
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