Electrical Characterization of Metal-Ferroelectric-Insulator- Semiconductor having Double Layered Insulator for Memory Applications

Metal-ferroelectric-insulator-semiconductor (MFIS) devices were successfully fabricated using poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE) and poly (methyl methacrylate): titanium dioxide (PMMA:TiO2) nanocomposite as ferroelectric and insulator films, respectively on n-type silicon (n-Si)...

Full description

Saved in:
Bibliographic Details
Published inIOP conference series. Materials Science and Engineering Vol. 64; no. 1; p. 12053
Main Authors Ismail, L N, Wahid, M H, Habibah, Z, Herman, S H, Rozana, M D, Rusop, M
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 22.08.2014
Subjects
Dielectric loss
Electrical properties
Electronic devices
Ferroelectric materials
Ferroelectricity
Frequency ranges
Insulators
Leakage current
Memory devices
Nanocomposites
Polymethyl methacrylate
Silicon substrates
Sol-gel processes
Spin coating
Titanium
Titanium dioxide
Vinylidene
Vinylidene fluoride
Online AccessGet full text

Cover

More Information
Summary:Metal-ferroelectric-insulator-semiconductor (MFIS) devices were successfully fabricated using poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE) and poly (methyl methacrylate): titanium dioxide (PMMA:TiO2) nanocomposite as ferroelectric and insulator films, respectively on n-type silicon (n-Si) substrate. Both ferroelectric and insulator films were prepared by sol-gel spin coating method. The electrical behaviour of metal-ferroelectric-metal (MFM) structure with PVDF-TrFE film and metal-insulator- metal (MIM) structure PMMA:TiO2 film exhibited different current characteristics. The capacitance of the MFIS devices was found to be 0.42 and 0.29 nF at frequency of 1kHz and 1 MHz respectively. Meanwhile, the dielectric loss values are constant (~60 × 10−3) in the frequency range from 100 Hz to 100 kHz. I-V results for MFIS are much higher than MIM and MFM is due to there is a trapped holes/electron located at the semiconductor- insulator interface which contributes to high leakage current in the MFIS device. We conclude, although interposing the PMMA :TiO2 nanocomposite insulator layer between the semiconductor and Al electrodes degrades the MFIS performance, nevertheless, they remain sufficiently good for use in organic electronic devices.
ISSN:1757-8981
1757-899X
DOI:10.1088/1757-899X/64/1/012053