A 2.4-GHz silicon bipolar oscillator with integrated resonator

A 2.4 GHz fully-monolithic silicon-bipolar oscillator circuit implemented in a 12 GHz BiCMOS technology is presented. The integrated resonator circuit uses three different versions of a 2 nH multilevel inductor and a wideband capacitive transformer. The measured Q factor is 9.3 for the three-level i...

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Bibliographic Details
Published inIEEE journal of solid-state circuits Vol. 31; no. 2; pp. 268 - 270
Main Authors Soyuer, M., Jenkins, K.A., Burghartz, J.N., Ainspan, H.A., Canora, F.J., Ponnapalli, S., Ewen, J.F., Pence, W.E.
Format Journal Article
LanguageEnglish
Published IEEE 01.02.1996
Subjects
BiCMOS integrated circuits
Inductors
Integrated circuit measurements
Integrated circuit technology
Oscillators
Phase noise
Q factor
Q measurement
Silicon
Wideband
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Summary:A 2.4 GHz fully-monolithic silicon-bipolar oscillator circuit implemented in a 12 GHz BiCMOS technology is presented. The integrated resonator circuit uses three different versions of a 2 nH multilevel inductor and a wideband capacitive transformer. The measured Q factor is 9.3 for the three-level inductor. An oscillator phase noise of -78 dBc/Hz is achieved at 20 kHz offset. The circuit dissipates 50 mW from a 3.6 V supply.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9200
1558-173X
DOI:10.1109/4.488006