Electrical characteristics of Ti-doped Ta2O5 stacked capacitors

Saved in:
Bibliographic Details
Published inThin solid films Vol. 516; no. 23; pp. 8684 - 8692
Main Authors ATANASSOVA, E, SPASSOV, D, PASKALEVA, A, GEORGIEVA, M, KOPRINAROVA, J
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier 01.10.2008
Subjects
Applied sciences
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science; rheology
Deposition by sputtering
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport phenomena in thin films and low-dimensional structures
Electronics
Exact sciences and technology
Materials science
Methods of deposition of films and coatings; film growth and epitaxy
Physics
Tantalum oxide
Electrical properties
Vacancy
Capacitors
High-dielectric constant stacks
Dielectric properties
Doping
Sputtering
Electrical measurement
Thick film
Titanium doped tantalum oxide
Compensation
Titanium
High k dielectric
Electrical measurements
Titanium oxide
Capacitor
Electrical characteristic
Online AccessGet full text

Cover

More Information
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2008.05.003