Single crystalline β-Fesi2 grown using high-purity FeSi2 source

• Published in: Thin solid films Vol. 515; no. 22; pp. 8263 - 8267
• Main Authors: GOTOH, Kouhei, SUZUKI, Hirokazu, UDONO, Haruhiko, KIKUMA, Isao, ESAKA, Fumitaka, UCHIKOSHI, Masahito, ISSHIKI, Minoru
• Format: Conference Proceeding Journal Article
• Language: English
• Published: Lausanne Elsevier Science 15.08.2007
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport phenomena in thin films and low-dimensional structures; Exact sciences and technology; Growth from solutions; Materials science; Methods of crystal growth; physics of crystal growth; Physics; Surface and interface electron states; Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation; Crystal growth; Electronic properties; Electrical properties; Doping; Secondary ion mass spectrometry; Mass spectroscopy; Hall effect; Quartz; Monocrystals; Inductively coupled plasma; Silicon oxides; Solution growth; Growth mechanism; Chromium; Nickel; P type conductivity; Copper; Carrier density; Impurity states; Iron silicides; Hall measurement; Growth from solution; β-FeSi2i Single crystal; Glow discharges
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2007.02.066