Si1 ― xGex metal-oxide-semiconductor capacitors with HfTaOx gate dielectrics

• Published in: Thin solid films Vol. 520; no. 1; pp. 101 - 105
• Main Authors: MALLIK, S, MAHATA, C, HOTA, M. K, SARKAR, C. K, MAITI, C. K
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier 31.10.2011
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Deposition by sputtering; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport phenomena in thin films and low-dimensional structures; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Molecular, atomic, ion, and chemical beam epitaxy; Physics; Surface and interface electron states; Surface states, band structure, electron density of states; Valence bands; Ge-Si alloys; Interface layer; Silicates; Photoelectron spectroscopy; Thin films; Energy gap; SiGe; Temperature effects; MOS capacitors; Gallium tellurides; Hafnium; Physical vapor deposition; Molecular beam epitaxy; Silicon; Band offset; Interface reaction; Hysteresis; X-ray photoelectron spectroscopy; Conduction bands; Electronic properties; Annealing; HfTaO; Experimental data; Electrical properties; Interface states; Interfaces; Electronic structure; Silicon oxides; Binding energy; Capacitance; Germanium; High k dielectric; Gates; X-ray photoelectron spectra
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2011.06.057