Preparation of graphene on SiC by laser-accelerated pulsed ion beams

• Published in: Chinese physics B Vol. 30; no. 11; pp. 116106 - 522
• Main Authors: Zhou, Danqing, Li, Dongyu, Chen, Yuhan, Wu, Minjian, Yang, Tong, Cheng, Hao, Li, Yuze, Chen, Yi, Li, Yue, Geng, Yixing, Zhao, Yanying, Lin, Chen, Yan, Xueqing, Zhao, Ziqiang
• Format: Journal Article
• Language: English
• Published: Beijing Laser Acceleration Innovation Center,Huairou,Beijing 101400,China 01.11.2021; Institute of Guangdong Laser Plasma Technology,Guangzhou 510540,China; State Key Laboratory of Nuclear Physics and Technology,Peking University,Beijing 100871,China%State Key Laboratory of Nuclear Physics and Technology,Peking University,Beijing 100871,China; Beijing Laser Acceleration Innovation Center,Huairou,Beijing 101400,China%State Key Laboratory of Nuclear Physics and Technology,Peking University,Beijing 100871,China
• Subjects: laser ion acceleration; graphene; self-annealing
• ISSN: 1674-1056
• DOI: 10.1088/1674-1056/abfc3c

Laser-accelerated ion beams (LIBs) have been increasingly applied in the field of material irradiation in recent years due to the unique properties of ultra-short beam duration, extremely high beam current, etc. Here we explore an application of using laser-accelerated ion beams to prepare graphene. The pulsed LIBs produced a great instantaneous beam current and thermal effect on the SiC samples with a shooting frequency of 1 Hz. In the experiment, we controlled the deposition dose by adjusting the number of shootings and the irradiating current by adjusting the distance between the sample and the ion source. During annealing at 1100 °C, we found that the 190 shots ion beams allowed more carbon atoms to self-assemble into graphene than the 10 shots case. By comparing with the controlled experiment based on ion beams from a traditional ion accelerator, we found that the laser-accelerated ion beams could cause greater damage in a very short time. Significant thermal effect was induced when the irradiation distance was reduced to less than 1 cm, which could make partial SiC self-annealing to prepare graphene dots directly. The special effects of LIBs indicate their vital role to change the structure of the irradiation sample.