A 1.1-V current-mode and piecewise-linear curvature-corrected bandgap reference

A low-voltage, micropower, curvature-corrected bandgap reference is presented that is capable of working down to input voltages of 1.1 V in a relatively inexpensive process, MOSIS 2 /spl mu/m technology. This is a vanilla N-well complementary metal-oxide-semiconductor process technology with an adde...

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Bibliographic Details
Published inIEEE journal of solid-state circuits Vol. 33; no. 10; pp. 1551 - 1554
Main Authors Rincon-Mora, G., Allen, P.E.
Format Journal Article
LanguageEnglish
Published IEEE 01.10.1998
Subjects
Circuits
CMOS technology
Dynamic range
Isolation technology
Low voltage
Photonic band gap
Piecewise linear techniques
Power supplies
Temperature dependence
Temperature distribution
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Summary:A low-voltage, micropower, curvature-corrected bandgap reference is presented that is capable of working down to input voltages of 1.1 V in a relatively inexpensive process, MOSIS 2 /spl mu/m technology. This is a vanilla N-well complementary metal-oxide-semiconductor process technology with an added P-base layer. Second-order curvature correction for this reference is accomplished by a versatile piecewise-linear current-mode technique. The 0.595 V precision reference achieved a line regulation performance of 408 ppm/V for input voltages between 1.2 and 10 V. The circuit only used 14 /spl mu/A of quiescent current flow.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9200
1558-173X
DOI:10.1109/4.720402