Vertical polarization-induced doping InN/InGaN heterojunction tunnel FET with hetero T-shaped gate

• Published in: Chinese physics B Vol. 30; no. 5; pp. 58501 - 783
• Main Authors: He, Yuan-Hao, Mao, Wei, Du, Ming, Peng, Zi-Ling, Wang, Hai-Yong, Zheng, Xue-Feng, Wang, Chong, Zhang, Jin-Cheng, Hao, Yue
• Format: Journal Article
• Language: English
• Published: Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China 01.05.2021
• Subjects: polarization-doped source and drain; hetero T-shaped gate; InGaN TFET
• ISSN: 1674-1056
• DOI: 10.1088/1674-1056/abd73f

A novel vertical InN/InGaN heterojunction tunnel FET with hetero T-shaped gate as well as polarization-doped source and drain region (InN-Hetero-TG-TFET) is proposed and investigated by Silvaco-Atlas simulations for the first time. Compared with the conventional physical doping TFET devices, the proposed device can realize the P-type source and N-type drain region by means of the polarization effect near the top InN/InGaN and bottom InGaN/InN heterojunctions respectively, which could provide an effective solution of random dopant fluctuation (RDF) and the related problems about the high thermal budget and expensive annealing techniques due to ion-implantation physical doping. Besides, due to the hetero T-shaped gate, the improvement of the on-state performance can be achieved in the proposed device. The simulations of the device proposed here in this work show I ON of 4.45 × 10 −5 A/μm, I ON / I OFF ratio of 10 13 , and SS avg of 7.5 mV/dec in InN-Hetero-TG-TFET, which are better than the counterparts of the device with a homo T-shaped gate (InN-Homo-TG-TFET) and our reported lateral polarization-induced InN-based TFET (PI-InN-TFET). These results can provide useful reference for further developing the TFETs without physical doping process in low power electronics applications.