Doped Ta2O5 and mixed HfO2–Ta2O5 films for dynamic memories applications at the nanoscale

The doping of Ta2O5 films with a proper element or its mixing with another high-k dielectric as a breakthrough to extend the potential of Ta2O5 toward meeting the criteria for future technological nodes is discussed. Essential issues in the engineering of storage capacitor parameters for dynamic mem...

Full description

Saved in:
Bibliographic Details
Published inMicroelectronics and reliability Vol. 52; no. 4; pp. 642 - 650
Main Authors Atanassova, E., Paskaleva, A., Spassov, D.
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.04.2012
Subjects
Capacitors
Dynamics
Hafnium oxide
Nanocomposites
Nanomaterials
Nanostructure
Stacks
Tantalum oxides
Online AccessGet full text

Cover

More Information
Summary:The doping of Ta2O5 films with a proper element or its mixing with another high-k dielectric as a breakthrough to extend the potential of Ta2O5 toward meeting the criteria for future technological nodes is discussed. Essential issues in the engineering of storage capacitor parameters for dynamic memories based on Ti-doped Ta2O5, Hf-doped Ta2O5 and mixed HfO2–Ta2O5 layers are presented. The benefits and the disadvantages of these modified Ta2O5 stacks are discussed.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0026-2714
1872-941X
DOI:10.1016/j.microrel.2011.09.027