Actual Carrier Mobility Determination of GaInAsSb/InAs Grown by Liquid Phase Epitaxy

A theory for the effective mobility and the density of carriers of a double layer is given and compared with an old theory established by Petritz [Phys. Rev. 110 (1958) 1254]. Validity of the present theory is confirmed by an experiment using an epitaxial layer of Gd-doped GaInAsSb layer grown on an...

Full description

Saved in:
Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 32; no. S3; p. 664
Main Authors Yamaguchi, Tomuo, Suzuki, Isao, Kan, Gong, Aoyama, Mitsuru, Kumagawa, Masashi
Format Journal Article
LanguageEnglish
Published 01.01.1993
Online AccessGet full text

Cover

More Information
Summary:A theory for the effective mobility and the density of carriers of a double layer is given and compared with an old theory established by Petritz [Phys. Rev. 110 (1958) 1254]. Validity of the present theory is confirmed by an experiment using an epitaxial layer of Gd-doped GaInAsSb layer grown on an InAs substrate by Liquid Phase Epitaxial (LPE) method.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAPS.32S3.664