Modeling observed capacitance–voltage hysteresis in metal–SiO2-thin film organic semiconductor devices
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| Published in | Solid-state electronics Vol. 50; no. 6; pp. 1097 - 1104 |
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| Main Authors | , , , , |
| Format | Journal Article Conference Proceeding |
| Language | English |
| Published |
Oxford
Elsevier Science
01.06.2006
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| Subjects | |
| Online Access | Get full text |
| ISSN | 0038-1101 1879-2405 |
| DOI | 10.1016/j.sse.2006.04.032 |
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| Author | Barycza, Mark Niemann, Darrell Rahman, Mahmud Gunther, Norman Kwong, Charles |
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| Cites_doi | 10.1016/S0379-6779(01)00508-2 10.1016/S0038-1101(99)00281-6 10.1109/DRC.2005.1553080 10.1103/PhysRevB.68.085301 10.1063/1.1459117 10.1016/S0379-6779(01)00509-4 10.1109/LED.2005.854394 10.1063/1.1641959 |
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| Keywords | Molecular orbital Phenylenevinylene polymer Voltage threshold Semiconductor thin films Circuit design Thermodynamic-variational model 77.22.Ej Modeling Metallic thin films Flat band voltage Thermodynamic model 73.61.Ph p type semiconductor 73.40.Qv Organic semiconductors Variational calculus Computer aided design Hysteresis Pentacene MOOSCAP OFET Semiconductor insulator contact Polarization charge MOS structure Free energy Charge density Field effect transistor Arylamino-PPV Silicon oxides TCAD Capacitance Threshold voltage Capacitor Comparative study 72.80.Le |
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| References | Ryu (10.1016/j.sse.2006.04.032_bib6) 2005; 26 Heeger (10.1016/j.sse.2006.04.032_bib2) 2002; 125 10.1016/j.sse.2006.04.032_bib8 MacDiarmid (10.1016/j.sse.2006.04.032_bib3) 2002; 125 Gunther (10.1016/j.sse.2006.04.032_bib7) 2005 Yang (10.1016/j.sse.2006.04.032_bib11) 2002; 80 10.1016/j.sse.2006.04.032_bib5 Scheinert (10.1016/j.sse.2006.04.032_bib1) 2000; 44 Gunther (10.1016/j.sse.2006.04.032_bib9) 2004; 95 Tsiper (10.1016/j.sse.2006.04.032_bib4) 2003; 68 10.1016/j.sse.2006.04.032_bib10 |
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| SubjectTerms | Applied sciences Compound structure devices Dielectric, amorphous and glass solid devices Electronics Exact sciences and technology Interfaces Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors |
| Title | Modeling observed capacitance–voltage hysteresis in metal–SiO2-thin film organic semiconductor devices |
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