Modeling observed capacitance–voltage hysteresis in metal–SiO2-thin film organic semiconductor devices

• Published in: Solid-state electronics Vol. 50; no. 6; pp. 1097 - 1104
• Main Authors: Niemann, Darrell, Gunther, Norman, Kwong, Charles, Barycza, Mark, Rahman, Mahmud
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Oxford Elsevier Science 01.06.2006
• Subjects: Applied sciences; Compound structure devices; Dielectric, amorphous and glass solid devices; Electronics; Exact sciences and technology; Interfaces; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Transistors; Molecular orbital; Phenylenevinylene polymer; Voltage threshold; Semiconductor thin films; Circuit design; Thermodynamic-variational model; 77.22.Ej; Modeling; Metallic thin films; Flat band voltage; Thermodynamic model; 73.61.Ph; p type semiconductor; 73.40.Qv; Organic semiconductors; Variational calculus; Computer aided design; Hysteresis; Pentacene; MOOSCAP; OFET; Semiconductor insulator contact; Polarization charge; MOS structure; Free energy; Charge density; Field effect transistor; Arylamino-PPV; Silicon oxides; TCAD; Capacitance; Threshold voltage; Capacitor; Comparative study; 72.80.Le
• ISSN: 0038-1101; 1879-2405
• DOI: 10.1016/j.sse.2006.04.032