APA (7th ed.) Citation

Niemann, D., Gunther, N., Kwong, C., Barycza, M., & Rahman, M. (2006). Modeling observed capacitance–voltage hysteresis in metal–SiO2-thin film organic semiconductor devices. Solid-state electronics, 50(6), 1097-1104. https://doi.org/10.1016/j.sse.2006.04.032

Chicago Style (17th ed.) Citation

Niemann, Darrell, Norman Gunther, Charles Kwong, Mark Barycza, and Mahmud Rahman. "Modeling Observed Capacitance–voltage Hysteresis in Metal–SiO2-thin Film Organic Semiconductor Devices." Solid-state Electronics 50, no. 6 (2006): 1097-1104. https://doi.org/10.1016/j.sse.2006.04.032.

MLA (9th ed.) Citation

Niemann, Darrell, et al. "Modeling Observed Capacitance–voltage Hysteresis in Metal–SiO2-thin Film Organic Semiconductor Devices." Solid-state Electronics, vol. 50, no. 6, 2006, pp. 1097-1104, https://doi.org/10.1016/j.sse.2006.04.032.