C-V characterization of SF6 plasma treated AlGaN/GaN heterostructures

Saved in:
Bibliographic Details
Published inMicroelectronic engineering Vol. 87; no. 11; pp. 2208 - 2210
Main Authors OSVAID, J, LALINSKY, T, VANKO, G, HASCIK, S, VINCZE, A
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier 01.11.2010
Subjects
Applied sciences
Compound structure devices
Cross-disciplinary physics: materials science; rheology
Electronics
Exact sciences and technology
Materials science
Microelectronic fabrication (materials and surfaces technology)
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Surface treatments
Ternary compound
Binary compound
Ion implantation
Semiconductor materials
Material processing
Electric charge
Aluminium nitride
Plasma assisted processing
Capacitance measurement
Two-dimensional electron gas
Gallium nitride
III-V compound
Secondary ion mass spectra
Microelectronic fabrication
Plasma etching
Capacitance
Heterostructures
Voltage capacity curve
Electrical characteristic
Online AccessGet full text

Cover

More Information
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2010.02.004