Unified complete MOSFET model for analysis of digital and analog circuits

• Published in: IEEE transactions on computer-aided design of integrated circuits and systems Vol. 15; no. 1; pp. 1 - 7
• Main Authors: Miura-Mattausch, M., Feldmann, U., Rahm, A., Bollu, M., Savignac, D.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.01.1996; Institute of Electrical and Electronics Engineers
• Subjects: Analog circuits; Applied sciences; Capacitance; Central Processing Unit; Circuit analysis; Circuit simulation; Design. Technologies. Operation analysis. Testing; Electronics; Exact sciences and technology; Integrated circuits; MOSFET circuits; Nonlinear equations; Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Surface treatment; Voltage; Field effect transistor; Voltage current curve; Simulation; MOS transistor; Doping profile; Modeling; Computer aided design
• ISSN: 0278-0070; 1937-4151
• DOI: 10.1109/43.486267

In this paper, we describe a complete MOSFET model developed for circuit simulation based on fully consistent physical concept. The model describes all transistor characteristics as a function of surface potentials, which are calculated iteratively at each applied voltage under the charge-sheet approximation. The key idea of this development is to put as much physics as possible into the equations describing the surface potentials. Since the model includes both the drift and the diffusion contributions, a single equation is valid from the subthreshold to the saturation regions. Contrary to the expectation, the results show that our semi-implicit model including the iteration procedures can even reduce the CPU time significantly in comparison with a conventional model similar to BSIM2 including short-channel effects. This is due to the consistent description of the model equations for all transistor characteristics, which results in more straightforward device equations, once the surface potentials have been computed.