Electrochemical formation and properties of n-GaAs/Au and n-GaAs/Ag Schottky barriers: Influence of surface composition upon the barrier height

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Bibliographic Details
Published inPhysical chemistry chemical physics : PCCP Vol. 3; no. 23; pp. 5297 - 5303
Main Authors DE VRIEZE, A, STRUBBE, K, GOMES, W. P, FORMENT, S, VAN MEIRHAEGHE, R. L
Format Journal Article
LanguageEnglish
Published Cambridge Royal Society of Chemistry 26.11.2001
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Physics
Surface double layers, schottky barriers, and work functions
Atomic force microscopy
Gold
Gallium arsenides
Schottky barriers
n-type conductors
Electrochemical coating
Experimental study
Surface composition
Metal-semiconductor contacts
Surface double layers
Interface structure
Cyclic voltammetry
Silver
Electronic structure
Transition elements
Barrier height
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ISSN:1463-9076
1463-9084
DOI:10.1039/b104887m