Characterization of CoxNiyO hybrid metal oxide nanoparticles as charge trapping nodes in nonvolatile memory devices

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Bibliographic Details
Published inSolid-state electronics Vol. 52; no. 10; pp. 1530 - 1535
Main Authors CHENG, Chin-Lung, LIU, Chien-Wei, CHANG-LIAO, Kuei-Shu, TSAI, Ping-Hung, JENG, Jin-Tsong, HUANG, Sung-Wei, DAI, Bau-Tong
Format Conference Proceeding Journal Article
LanguageEnglish
Published Oxford Elsevier Science 01.10.2008
Subjects
Applied sciences
Cross-disciplinary physics: materials science; rheology
Design. Technologies. Operation analysis. Testing
Electronics
Exact sciences and technology
Integrated circuits
Integrated circuits by function (including memories and processors)
Magnetic and optical mass memories
Materials science
Nanoscale materials and structures: fabrication and characterization
Other topics in nanoscale materials and structures
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Storage and reproduction of information
Memory devices
Scanning electron microscopy
Nanoparticle
Chemical vapor deposition
Coated material
Charge density
Holes trapping
Charge carrier trapping
Microelectronic fabrication
Flat band voltage
Charge trapping nodes
Non volatile memory
CoxNiyO
Integrated circuit
Hafnium Nitrides oxides
Hybrid metal oxide nanoparticles
Surface properties
Nonvolatile memory devices
High k dielectric
Voltage capacity curve
Electrical characteristic
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ISSN:0038-1101
1879-2405
DOI:10.1016/j.sse.2008.06.014