Domain wall oscillation in magnetic nanowire with a geometrically confined region

• Published in: Journal of magnetism and magnetic materials Vol. 456; pp. 324 - 328
• Main Authors: Sbiaa, R., Bahri, M. Al, Piramanayagam, S.N.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier BV 15.06.2018
• Subjects: Alternating current; Domain walls; Electric converters; Electric currents; Electronic devices; Electronic systems; Electronics; Geometry; Magnetic devices; Magnetism; Material properties; Nanowires; Oscillators; Stability; Tunnel junctions
• ISSN: 0304-8853; 1873-4766
• DOI: 10.1016/j.jmmm.2018.02.057

In conventional magnetic devices such as magnetic tunnel junctions, a steady oscillation of a soft layer magnetization could find its application in various electronic systems. However, these devices suffer from their low output signal and large spectral linewidth. A more elegant scheme based on domain wall oscillation could be a solution to these issues if DW dynamics could be controlled precisely in space and time. In fact, in DW devices, the magnetic configuration of domain wall and its position are strongly dependent on the device geometry and material properties. Here we show that in a constricted device with judiciously adjusted dimensions, a DW can be trapped within the central part and keep oscillating with a single frequency f. For 200 nm by 40 nm nanowire, f was found to vary from 2 GHz to 3 GHz for a current density between 4.8 × 1012 A/m2 and 5.6 × 1012 A/m2. More interestingly, the device fabrication is simply based on two long nanowires connected by adjusting the offset in both x and y directions. This new type of devices enables the conversion of dc-current to an ac-voltage in a controllable manner opening thus the possibility of a new nano-oscillators with better performance.