A new direction in the creation of ceramic materials with a specified phase composition and structure. part ii. theoretical foundations of low-temperature synthesis of sic from gels and practical realization of this process in the technology of ceramics and refractories 1. Physicochemical foundations of low-temperature synthesis of sic in heat treatment of gels

Results of a thermodynamic study of 108 phase diagrams of the system Si — O2 — C plotted in the coordinatesRT lnpQ2 —T are presented. Conditions of the gas medium that intensify SiC synthesis are established. According to the phase diagrams of Si — O2 — C, carbide formation can start at 700 K. The p...

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Published inRefractories and industrial ceramics Vol. 40; no. 9-10; pp. 433 - 441
Main Authors Semchenko, G D, Dunikov, A V, Opryshko, I N, Starolat, E E, Tishchenko, S V
Format Journal Article
LanguageEnglish
Published New York Springer Nature B.V 01.09.1999
Subjects
Carbon monoxide
Ceramics
Foundations
Gels
Heat treatment
Low temperature
Phase composition
Phase diagrams
Refractories
Silicon
Silicon carbide
Synthesis
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Summary:Results of a thermodynamic study of 108 phase diagrams of the system Si — O2 — C plotted in the coordinatesRT lnpQ2 —T are presented. Conditions of the gas medium that intensify SiC synthesis are established. According to the phase diagrams of Si — O2 — C, carbide formation can start at 700 K. The presence of a minimum amount of SiO vapor at a ratio : 1 is the most favorable condition for synthesizing SiC from silica and carbon.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1083-4877
1573-9139
DOI:10.1007/BF02764196