Oxidation behavior of sintered tubular silicon carbide in pure steam Ι: Experiments

Experimental investigations are conducted on sintered tubular SiC in oxidizing environments containing pure steam at 1atm with temperature range of 1140–1500°C and velocity between 0.8 and 10m/s. Linear weight loss was observed with time. The linear weight loss rates exhibit sensitive dependence on...

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Bibliographic Details
Published inCeramics international Vol. 42; no. 1; pp. 1916 - 1925
Main Authors Lee, Youho, McKrell, Thomas J., Montecot, Aline, Pantano, Michael, Song, Yann, Kazimi, Mujid S.
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.01.2016
Subjects
Oxidation
Silicon carbide
Steam
Strength
Volatilization
Oxidation
Silicon carbide
Volatilization
Strength
Steam
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Summary:Experimental investigations are conducted on sintered tubular SiC in oxidizing environments containing pure steam at 1atm with temperature range of 1140–1500°C and velocity between 0.8 and 10m/s. Linear weight loss was observed with time. The linear weight loss rates exhibit sensitive dependence on flow rate at a given temperature, demonstrating effects of flow boundary-layer diffusion rate on silica volatilization kinetics. Silica scale exhibits morphology change with respect to exposure time in an oxidizing environment, progressively demonstrating bubble formation and surface smoothing, extensive formation of cracks and pores, and crack reduction. Yet, strength measurements of pressure-less sintered SiC show no significant change after oxidation in the tested conditions. Hence, the primary life-time limiting factor for structural application of pressure-less sintered SiC in the tested environments is anticipated to be the loss of the material.
ISSN:0272-8842
1873-3956
DOI:10.1016/j.ceramint.2015.09.161