AlGaN/GaN High Electron Mobility Transistors with a p-GaN Backgate Structure

This study discusses the impact of a p-GaN backgate structure on the DC characteristics of AlGaN/GaN HEMTs. AlGaN/GaN HEMTs with a p-GaN backgate layer showed reduction of leakage current and positive shift of threshold voltage while applying negative backgate bias. The shift of threshold voltage wa...

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Bibliographic Details
Published inECS transactions Vol. 85; no. 7; pp. 49 - 52
Main Authors Lin, Wei-Tse, Lin, Wei-Chun, Zhong, Yi Nan, Hsin, Yue-Ming
Format Journal Article
LanguageEnglish
Published The Electrochemical Society, Inc 09.04.2018
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Summary:This study discusses the impact of a p-GaN backgate structure on the DC characteristics of AlGaN/GaN HEMTs. AlGaN/GaN HEMTs with a p-GaN backgate layer showed reduction of leakage current and positive shift of threshold voltage while applying negative backgate bias. The shift of threshold voltage was 0.55 V, and reduction of off-state leakage current was 73.1% while backgate bias was -14 V. The on/off current ratio was in the range of 107 with backgate bias. It is possible to operate an AlGaN/GaN HEMT in both D- and E-modes with suitable epitaxial layer design using a p-GaN backgate structure.
ISSN:1938-5862
1938-6737
1938-6737
1938-5862
DOI:10.1149/08507.0049ecst