The Anomalous Effect of Interface Traps on Generation Current in Lightly Doped Drain nMOSFET's

The anomalous phenomenon of generation current IGD in the lightly doped drain (LDD) nMOSFET measured under the drain bias VD-step mode is reported. We propose an assumption of activated (A) and frozen (F) traps for the VD-step mode: The A traps contributes to IGD while the F process can make them lo...

Full description

Saved in:
Bibliographic Details
Published inChinese physics letters Vol. 27; no. 5; p. 057301
Main Authors Xiao-Hua, Ma, Hai-Xia, Gao, Yan-Rong, Cao, Hai-Feng, Chen, Yue, Hao
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.05.2010
Online AccessGet full text

Cover

More Information
Summary:The anomalous phenomenon of generation current IGD in the lightly doped drain (LDD) nMOSFET measured under the drain bias VD-step mode is reported. We propose an assumption of activated (A) and frozen (F) traps for the VD-step mode: The A traps contributes to IGD while the F process can make them lose the roles as generation centers. The A and F regions can form the F-A region. The comparison of the F and A regions decides the role of the F-A region. The experiments confirm the assumption.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/27/5/057301