Dark current suppression in HOT LWIR HgCdTe heterostructures operating in non-equilibrium mode

Typically,infrared detectors require cryogenic cooling to limit dark current which is directly dependent on Auger generation-recombination mechanism and highly influential in Hg Cd Te-narrowband gap material. The Auger suppressed architectures have an advantage over conventional detectors allowing o...

Full description

Saved in:
Bibliographic Details
Published in红外与毫米波学报 Vol. 34; no. 4; pp. 385 - 390
Main Author Martyniuk P Gawron W Pawluczyk J Keblowski A Madejczyk P Rogalski A
Format Journal Article
LanguageChinese
Published 01.08.2015
Subjects
光电技术
应用
毫米波技术
红外技术
HgCdTe
HOT
non-equilibrium conditions
barrier infrared detectors
Online AccessGet full text

Cover

More Information
Summary:Typically,infrared detectors require cryogenic cooling to limit dark current which is directly dependent on Auger generation-recombination mechanism and highly influential in Hg Cd Te-narrowband gap material. The Auger suppressed architectures have an advantage over conventional detectors allowing operation at elevated temperatures 200 K. Architecture with combination of exclusion and extraction heterojunctions has been proposed to lower Auger contribution. The paper presents a newlong-wave（ ≈ 10 μm） infrared Hg Cd Te architecture with graded gap / doping interfaces and extra barrier located in exclusion heterojunction to suppress dark current for high operating temperature conditions. Proper barrier implementation reduces dark current by more than 20 A / cm2 for room temperature operation.
Bibliography:Martyniuk P;Gawron W;Pawluczyk J;Keblowski A;Madejczyk P;Rogalski A （ 1. Institute of Applied Physics, Military University of Technology, 2 Kaliskieg0 Str. , 00-908 Warsaw, Poland; 2. Vigo System S. A. , 129/133 Poznaflska Str. , 05-850 0 zarow Mazowiecki, Poland）
Typically,infrared detectors require cryogenic cooling to limit dark current which is directly dependent on Auger generation-recombination mechanism and highly influential in Hg Cd Te-narrowband gap material. The Auger suppressed architectures have an advantage over conventional detectors allowing operation at elevated temperatures 200 K. Architecture with combination of exclusion and extraction heterojunctions has been proposed to lower Auger contribution. The paper presents a newlong-wave（ ≈ 10 μm） infrared Hg Cd Te architecture with graded gap / doping interfaces and extra barrier located in exclusion heterojunction to suppress dark current for high operating temperature conditions. Proper barrier implementation reduces dark current by more than 20 A / cm2 for room temperature operation.
31-1577/TN
HOT; HgCdTe; non-equilibrium conditions; barrier infrared detectors
ISSN:1001-9014
DOI:10.11972/j.issn.1001-9014.2015.04.001