Neutron-Induced Radiation Effects in UMOS Transistor

Ground level electronics and avionics systems may suffer from radiation effects induced by neutrons. Neutrons can induce radiation effects in electronic devices via fusion-evaporation nuclear reactions, but few studies have been reported for technologies such as UMOSFET. In this work, estimates and...

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Bibliographic Details
Published inJournal of physics. Conference series Vol. 2340; no. 1; pp. 12046 - 12051
Main Authors Alberton, S G, Bôas, A C V, Medina, N H, Guazzelli, M A, Aguiar, V A P, Added, N, Federico, C A, Gonçalez, O L, Cavalcante, T C, Pereira Junior, E C F, Vaz, R G
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.09.2022
Subjects
Avionics
Charge efficiency
Electronic devices
Energy measurement
Energy spectra
Estimates
Fast neutrons
Neutron beams
Neutron irradiation
Neutrons
Nuclear fusion
Nuclear reactions
Physics
Power semiconductor devices
Radiation counters
Radiation effects
Silicon
Single Event Effects
Transistors
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Summary:Ground level electronics and avionics systems may suffer from radiation effects induced by neutrons. Neutrons can induce radiation effects in electronic devices via fusion-evaporation nuclear reactions, but few studies have been reported for technologies such as UMOSFET. In this work, estimates and experimental studies on neutron-induced radiation effects via nuclear reactions in a Si-based UMOSFET are presented. Methods for probability estimates of neutron-induced Single-Event Effects (SEEs) in Si-based power transistors and neutron beam energy measurement is presented. The energy spectrum of a UMOSFET subject to fast neutron irradiation was then compared to that of a high charge collection efficiency silicon particle detector.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
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ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/2340/1/012046