Blue luminescence of indium-doped ZnO thin films prepared by DC magnetron sputtering

Abstract ZnO is an intrinsic semiconductor suitable for many optical applications. In this current study homemade DC magnetron sputtering was used to grow undoped ZnO and indium-doped ZnO (or IZO) thin films. The indium content was varied from a mole fraction ratio of In 2 O 3 were 0 at% to 6 at%. T...

Full description

Saved in:
Bibliographic Details
Published inJournal of physics. Conference series Vol. 1968; no. 1; pp. 12045 - 12050
Main Authors Sugianto, S, Nurilhilmah, N, Darsono, T, Sugiyanto, S, Aryanto, D, Isnaeni, I
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.07.2021
Subjects
Broadband
Emission spectra
Indium
Indium oxides
Magnetron sputtering
Optical properties
Photoluminescence
Photovoltaic cells
Radiative recombination
Thin films
Wurtzite
X-ray diffraction
Zinc oxide
Online AccessGet full text

Cover

More Information
Summary:Abstract ZnO is an intrinsic semiconductor suitable for many optical applications. In this current study homemade DC magnetron sputtering was used to grow undoped ZnO and indium-doped ZnO (or IZO) thin films. The indium content was varied from a mole fraction ratio of In 2 O 3 were 0 at% to 6 at%. The structure of IZO films analyzed by X-ray diffraction (XRD), and the optical properties were carried out using UV-visible and photoluminescence (PL) spectroscopies. The XRD results demonstrated that IZO maintained a hexagonal wurtzite structure with a (002) preferential orientation. The optical band gap increased with an increase in indium doped concentration. The PL spectrum exhibits a broadband blue emission from IZO films centered at 440 nm (2,82 eV), originating from the radiative recombination at the defect level. Interestingly, the intensity of blue emission increased with an increase in indium-doped concentration.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/1968/1/012045