Short Circuit Ruggedness of 600 V SiC Trench JFETs

• Published in: Materials science forum Vol. 1004; pp. 933 - 938
• Main Authors: Sundaramoorthy, Vinoth, Knoll, Lars, Wirths, Stephan, Arango, Yulieth, Bellini, Marco, Kranz, Lukas, Romano, Gianpaolo, Bianda, Enea, Mihaila, Andrei
• Format: Journal Article
• Language: English
• Published: Pfaffikon Trans Tech Publications Ltd 28.07.2020
• Subjects: Circuits; Electric potential; Operating temperature; Ruggedness; Short circuit currents; Silicon carbide; Voltage; Trench JFETs; Short Circuit Capability; Dynamic Switching; Ruggedness

Silicon Carbide JFETs with low on-state resistance are suitable for a number of high power applications. The static, dynamic and short circuit characterization of 600 V SiC Trench JFETs are reported in this paper. Typical JFETs fabricated with a 1.2 μm cell pitch had an on-resistance value around 40...