Short Circuit Ruggedness of 600 V SiC Trench JFETs

• Published in: Materials science forum Vol. 1004; pp. 933 - 938
• Main Authors: Sundaramoorthy, Vinoth, Knoll, Lars, Wirths, Stephan, Arango, Yulieth, Bellini, Marco, Kranz, Lukas, Romano, Gianpaolo, Bianda, Enea, Mihaila, Andrei
• Format: Journal Article
• Language: English
• Published: Pfaffikon Trans Tech Publications Ltd 28.07.2020
• Subjects: Circuits; Electric potential; Operating temperature; Ruggedness; Short circuit currents; Silicon carbide; Voltage; Trench JFETs; Short Circuit Capability; Dynamic Switching; Ruggedness
• ISSN: 0255-5476; 1662-9752; 1662-9752
• DOI: 10.4028/www.scientific.net/MSF.1004.933

Silicon Carbide JFETs with low on-state resistance are suitable for a number of high power applications. The static, dynamic and short circuit characterization of 600 V SiC Trench JFETs are reported in this paper. Typical JFETs fabricated with a 1.2 μm cell pitch had an on-resistance value around 40 mΩ and blocking voltages of ~600 V across the wafer. JFETs were successfully switched with a dc link voltage of 300 V, a current of 15 A and operating temperature of 125 °C. These JFETs were subjected to a short circuit condition with duration ranging from 10 μs to 45 μs at a dc link voltage of ~300 V, and operating temperatures of 25 °C and 125 °C. The device could withstand subsequent short circuit successfully without any failure at both 25 °C and 125 °C. The short circuit current showed consistent dependency on the applied gate voltage, when it was varied from 0 V to 15 V.