Luminescence and scintillation properties of the Si doped InGaN/GaN multiple quantum wells

The InGaN multiple quantum wells (MQW) samples with the undoped and Si doped GaN barriers were grown by Metal Organic Vapour Phase Epitaxy (MOVPE). By comparing defects-related emission bands in the undoped GaN and InGaN layers, one may conclude that the band is complex in the InGaN layer, composed...

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Bibliographic Details
Published inJournal of physics. Conference series Vol. 2413; no. 1; pp. 12001 - 12009
Main Authors Buryi, M, Hubáček, T, Hájek, F, Jarý, V, Babin, V, Kuldová, K, Vaněk, T
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.12.2022
Subjects
Defects
Epitaxial growth
Indium gallium nitrides
Multi Quantum Wells
Physics
Silicon
Vapor phase epitaxy
Vapor phases
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Summary:The InGaN multiple quantum wells (MQW) samples with the undoped and Si doped GaN barriers were grown by Metal Organic Vapour Phase Epitaxy (MOVPE). By comparing defects-related emission bands in the undoped GaN and InGaN layers, one may conclude that the band is complex in the InGaN layer, composed of at least two contributions peaking at 2.17 and 2.39 eV, respectively. In and Si affect the intensity of the defects-related band – the larger the In and/or Si concentration the stronger the band. The detailed investigation of the observed phenomena was conducted, and the observed peculiarities were explained.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/2413/1/012001