TEM investigation of microstructure of semipolar GaN layers grown on nano-patterned Si(001) substrates

The synthesis of III-nitride binary compounds on commercial standard (001) silicon wafers by vapour-phase epitaxy is one of the promising directions for III-nitride technology development. However, the difference between crystal symmetry of Si(001) and wurzite (0001) surface structures is challenge...

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Bibliographic Details
Published inJournal of physics. Conference series Vol. 1697; no. 1; pp. 12120 - 12124
Main Authors Myasoedov, A V, Bert, N A, Bessolov, V N
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.12.2020
Subjects
Buffer layers
Crystal structure
Crystallography
Epitaxial growth
Gallium nitrides
Metalorganic chemical vapor deposition
Microstructure
Orientation relationships
Physics
Silicon substrates
Silicon wafers
Vapor phase epitaxy
Zinc sulfide
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Summary:The synthesis of III-nitride binary compounds on commercial standard (001) silicon wafers by vapour-phase epitaxy is one of the promising directions for III-nitride technology development. However, the difference between crystal symmetry of Si(001) and wurzite (0001) surface structures is challenge that hinders the development. A use of silicon substrates with nano-patterned surface is one of the solutions to the problem. In this paper we present a transmission electron microscopy study of polar and semipolar GaN layers grown by halide vapour-phase epitaxy and metalorganic vapour-phase epitaxy on nano-patterned silicon (001) substrate. Crystallographic orientation relationships between the silicon substrate and GaN layers is identified. For GaN layers grown by metalorganic vapour-phase epitaxy an effect of SiC buffer layer synthesized by original growth method on their microstructure and surface morphology is under consideration.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/1697/1/012120