Polyimide sacrificial layer for SOI SG-MOSFET pressure sensor

• Published in: Microelectronic engineering Vol. 83; no. 4; pp. 1185 - 1188
• Main Authors: Fernández-Bolaños, M., Abelé, N., Pott, V., Bouvet, D., Racine, G-A., Quero, J.M., Ionescu, A.M.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.04.2006; Elsevier Science
• Subjects: Applied sciences; Electronics; Exact sciences and technology; General equipment and techniques; Instruments, apparatus, components and techniques common to several branches of physics and astronomy; Physics; Polyimide; Pressure sensor; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing; SG-MOSFET; SOI; Transistors; Polyimide; SG-MOSFET; SOI; Pressure sensor; MOSFET; Suspended structure; Measurement sensor; Optimization; Silicon on insulator technology; Back surface; Engraving; Manufacturing process; Drain current; Wafer; Electrical characteristic; Sacrificial layer
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/j.mee.2005.12.021

This paper reports on the fabrication and electrical characterization of a novel pressure sensor based on a suspended-gate MOSFET (SG-MOSFET) using a new polyimide process. The device is composed of a SG-MOSFET built on a thin SOI membrane released by a backside silicon wafer etching. The membrane deflection induced by the backside-applied pressure (up to 250 kPa) is detected by the variation of the MOSFET drain current. Device behavior simulations and optimized fabrication process flow are presented as well as the first electrical characterization of the SG-MOSFET.