Specific features of dynamic injection and base layer modulation processes in power n +-p-p + diodes

The effect of electron-velocity saturation on the switch-on of an n{sup +}-p-p{sup +} structure in a quasi-neutral drift mode is considered. It is shown that electron-velocity saturation substantially decelerates the flight of the electron wave across the p-typebase of the n{sup +}-p-p{sup +} struct...

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Published inSemiconductors (Woodbury, N.Y.) Vol. 41; no. 11; pp. 1381 - 1387
Main Authors Mnatsakanov, T. T., Levinshtein, M. E., Tandoev, A. G., Yurkov, S. N.
Format Journal Article
LanguageEnglish
Published United States 01.11.2007
Subjects
CHARGE CARRIERS
ELECTRONS
LAYERS
MATERIALS SCIENCE
SEMICONDUCTOR SWITCHES
SIMULATION
VELOCITY
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Summary:The effect of electron-velocity saturation on the switch-on of an n{sup +}-p-p{sup +} structure in a quasi-neutral drift mode is considered. It is shown that electron-velocity saturation substantially decelerates the flight of the electron wave across the p-typebase of the n{sup +}-p-p{sup +} structure. This effect is also manifests itself in the stage of carrier accumulation in the p base of the structure. The velocity saturation effect is stronger, the thicker the base layer and the higher the rate at which the current flowing through the structure increases. The results obtained supplement the previously suggested classical description of the propagation of a minority carrier wave across the diode base layer, which disregards the effect of carrier velocity saturation. The results of an analytical calculation are confirmed by a numerical simulation.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782607110206