Reliability of GaAs-based semiconductor diode lasers: 0.6-1.1 mu m
Results of reliability studies of GaInP (0.6-0.7 mu m); AlGaAs, InAlGaAs, and InGaAsP (0.81 mu m); GaAs (0.86 mu m); and InGaAs (0.9-1.1 mu m) quantum-well laser diodes are summarized. Conclusions drawn from over one million cumulative lifetest hours and substantial electron-beam-induced-current (EB...
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| Published in | IEEE journal of quantum electronics Vol. 29; no. 6; pp. 2058 - 2067 |
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| Main Authors | , , , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
IEEE
01.06.1993
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| Subjects | |
| Online Access | Get full text |
| ISSN | 0018-9197 |
| DOI | 10.1109/3.234469 |
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| Abstract | Results of reliability studies of GaInP (0.6-0.7 mu m); AlGaAs, InAlGaAs, and InGaAsP (0.81 mu m); GaAs (0.86 mu m); and InGaAs (0.9-1.1 mu m) quantum-well laser diodes are summarized. Conclusions drawn from over one million cumulative lifetest hours and substantial electron-beam-induced-current (EBIC) failure analysis are presented. Improvements in laser reliability with the addition of indium (in both sudden failures and gradual degradation) and with the elimination of aluminium (in gradual degradation) have been observed. These trends, combined with the observed inconsequential effect of strain, provide guidelines for the design of highly reliable lasers.< > |
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| AbstractList | Results of reliability studies of GaInP (0.6-0.7 mu m); AlGaAs, InAlGaAs, and InGaAsP (0.81 mu m); GaAs (0.86 mu m); and InGaAs (0.9-1.1 mu m) quantum-well laser diodes are summarized. Conclusions drawn from over one million cumulative lifetest hours and substantial electron-beam-induced-current (EBIC) failure analysis are presented. Improvements in laser reliability with the addition of indium (in both sudden failures and gradual degradation) and with the elimination of aluminium (in gradual degradation) have been observed. These trends, combined with the observed inconsequential effect of strain, provide guidelines for the design of highly reliable lasers.< > The reliability of GaAs-based laser diodes operating at 0.6-1.1 mu m has been the subject of research at our facility for many years. Significant progress has been made into determining the relationships between failure mechanisms and lasing wavelength, strain, and the presence of indium and/or aluminum. Considerable effort has been dedicated to investigating sudden failure and gradual degradation with over one million hours of laser diode lifetesting to date. In this paper we summarize our results in laser reliability studies of GaInP (0.6-0.7 mu m); AlGaAs, InAlGaAs, and InGaAsP (0.81 mu m); GaAs (0.86 mu m); and InGaAs(0.9-1.1 mu m ) quantum-well laser diodes. |
| Author | Shepard, A.H. Bystrom, K.J. Baumann, J.A. Guido, T.S. Soltz, R. Harding, C.M. Yellen, S.L. Waters, R.G. Dalby, R.J. Serreze, H.B. |
| Author_xml | – sequence: 1 givenname: S.L. surname: Yellen fullname: Yellen, S.L. organization: McDonnell Douglas Electron. Syst. Co., Elmsford, NY, USA – sequence: 2 givenname: A.H. surname: Shepard fullname: Shepard, A.H. organization: McDonnell Douglas Electron. Syst. Co., Elmsford, NY, USA – sequence: 3 givenname: R.J. surname: Dalby fullname: Dalby, R.J. organization: McDonnell Douglas Electron. Syst. Co., Elmsford, NY, USA – sequence: 4 givenname: J.A. surname: Baumann fullname: Baumann, J.A. organization: McDonnell Douglas Electron. Syst. Co., Elmsford, NY, USA – sequence: 5 givenname: H.B. surname: Serreze fullname: Serreze, H.B. organization: McDonnell Douglas Electron. Syst. Co., Elmsford, NY, USA – sequence: 6 givenname: T.S. surname: Guido fullname: Guido, T.S. organization: McDonnell Douglas Electron. Syst. Co., Elmsford, NY, USA – sequence: 7 givenname: R. surname: Soltz fullname: Soltz, R. organization: McDonnell Douglas Electron. Syst. Co., Elmsford, NY, USA – sequence: 8 givenname: K.J. surname: Bystrom fullname: Bystrom, K.J. organization: McDonnell Douglas Electron. Syst. Co., Elmsford, NY, USA – sequence: 9 givenname: C.M. surname: Harding fullname: Harding, C.M. organization: McDonnell Douglas Electron. Syst. Co., Elmsford, NY, USA – sequence: 10 givenname: R.G. surname: Waters fullname: Waters, R.G. organization: McDonnell Douglas Electron. Syst. Co., Elmsford, NY, USA |
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| Snippet | Results of reliability studies of GaInP (0.6-0.7 mu m); AlGaAs, InAlGaAs, and InGaAsP (0.81 mu m); GaAs (0.86 mu m); and InGaAs (0.9-1.1 mu m) quantum-well... The reliability of GaAs-based laser diodes operating at 0.6-1.1 mu m has been the subject of research at our facility for many years. Significant progress has... |
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| SubjectTerms | Aluminum Capacitive sensors Degradation Failure analysis Gallium arsenide Indium gallium arsenide Quantum well lasers Semiconductor device reliability Semiconductor diodes Semiconductor lasers |
| Title | Reliability of GaAs-based semiconductor diode lasers: 0.6-1.1 mu m |
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