Reliability of GaAs-based semiconductor diode lasers: 0.6-1.1 mu m

Results of reliability studies of GaInP (0.6-0.7 mu m); AlGaAs, InAlGaAs, and InGaAsP (0.81 mu m); GaAs (0.86 mu m); and InGaAs (0.9-1.1 mu m) quantum-well laser diodes are summarized. Conclusions drawn from over one million cumulative lifetest hours and substantial electron-beam-induced-current (EB...

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Published inIEEE journal of quantum electronics Vol. 29; no. 6; pp. 2058 - 2067
Main Authors Yellen, S.L., Shepard, A.H., Dalby, R.J., Baumann, J.A., Serreze, H.B., Guido, T.S., Soltz, R., Bystrom, K.J., Harding, C.M., Waters, R.G.
Format Journal Article
LanguageEnglish
Published IEEE 01.06.1993
Subjects
Aluminum
Capacitive sensors
Degradation
Failure analysis
Gallium arsenide
Indium gallium arsenide
Quantum well lasers
Semiconductor device reliability
Semiconductor diodes
Semiconductor lasers
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ISSN0018-9197
DOI10.1109/3.234469

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Summary:Results of reliability studies of GaInP (0.6-0.7 mu m); AlGaAs, InAlGaAs, and InGaAsP (0.81 mu m); GaAs (0.86 mu m); and InGaAs (0.9-1.1 mu m) quantum-well laser diodes are summarized. Conclusions drawn from over one million cumulative lifetest hours and substantial electron-beam-induced-current (EBIC) failure analysis are presented. Improvements in laser reliability with the addition of indium (in both sudden failures and gradual degradation) and with the elimination of aluminium (in gradual degradation) have been observed. These trends, combined with the observed inconsequential effect of strain, provide guidelines for the design of highly reliable lasers.< >
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ISSN:0018-9197
DOI:10.1109/3.234469