Simulation study on total ionizing dose effect of IGBT gamma irradiation

• Published in: Journal of instrumentation Vol. 18; no. 9; p. P09030
• Main Authors: Fang, J., Hao, J.H., Zhao, Q., Fan, J.Q., Dong, Z.W.
• Format: Journal Article
• Language: English
• Published: Bristol IOP Publishing 01.09.2023
• Subjects: CAD; Computer aided design; Finite element method; Gamma irradiation; Gamma rays; Insulated gate bipolar transistors; Models and simulations; Power semiconductor devices; Radiation damage; Radiation damage evaluation methods; Radiation damage to electronic components; Radiation dosage; Simulation; Space missions
• ISSN: 1748-0221; 1748-0221
• DOI: 10.1088/1748-0221/18/09/P09030

Abstract The insulated gate bipolar transistor (IGBT) has emerged as a prominent high-power semiconductor device due to its excellent overall performance. It is widely utilized in various fields, including aerospace. Due to prolonged operation in complex irradiation environments, the performance of IGBTs is susceptible to degradation and damage. Therefore, conducting research on the variation of IGBT characteristics under irradiation environments is crucial to ensuring their long-term functionality in extended space missions. To evaluate and analyze the total ionizing dose (TID) effect of IGBTs during operation, this study adopts a trench IGBT as the device model. Utilizing the finite element method, technology computer-aided design (TCAD) is employed to simulate and analyze the electrical characteristic changes of IGBTs under different total radiation doses. The simulation results are subsequently validated through theoretical analysis. The simulation results indicate that gamma radiation significantly affects the overall electrical characteristics of IGBTs.