Investigations on the Recovery of the Electrical Properties of Smart Cut™-Transferred SiC Thin Film Using SiC-on-Insulator Structures

• Published in: Materials science forum Vol. 1124; pp. 57 - 65
• Main Authors: Delcroix, Mathieu, Corbin, Lucie, Caridroit, Simon, Moulin, Alexandre, Rouchier, Séverin, Mony, Karine, Masante, Cédric, Troutot, Nicolas, Rolland, Emmanuel, Gelineau, Guillaume, Widiez, Julie, Papon, Anne-Marie, Turchetti, Loic, Prudkovskiy, Vladimir S., Barbet, Sophie, Huet, Stéphanie
• Format: Journal Article
• Language: English
• Published: Pfaffikon Trans Tech Publications Ltd 21.08.2024; Trans Tech Publications Inc
• Subjects: Annealing; Chemical and Process Engineering; Chemical Sciences; Electrical properties; Electron mobility; Electron transport; Electronics; Engineering Sciences; High temperature; Low temperature; Material chemistry; Silicon carbide; Silicon substrates; Structural analysis; Thin films; Electrical Characterization; SiC-on-Insulator (SiCOI); Ion Slicing; Smart Cut; Layer Transfer
• ISSN: 0255-5476; 1662-9752; 1662-9752; 1662-9760
• DOI: 10.4028/p-yDH8Qb

SiC-on-Insulator (SiCOI) structures fabricated using the Smart Cut™ technique can be of great interest in order to probe the properties of a silicon carbide (SiC) transferred layer, by electrically insulating it from the receiver substrate. In this study, we report the fabrication of such a SiCOI structure using a SiC receiver, as well as its electrical and TEM characterization after high temperature annealing. We highlight a decrease of the transferred layer electrical resistivity with increasing annealing temperature, due to doping reactivation and electron mobility enhancement. After low temperature annealing (1200°C to 1400°C), deep acceptor levels, possibly located in a damaged region near the substrate’s surface, might be responsible of a non negligible electrical compensation. Beyond 1400°C however, the transferred SiC crystal is healed and electron transport is only subjected to shallow nitrogen ionization.